Infineon IRF100B202: A High-Performance Power MOSFET for Advanced Switching Applications

The relentless pursuit of efficiency and power density in modern electronics demands semiconductor components that offer superior performance, reliability, and thermal management. The Infineon IRF100B202 stands out as a quintessential N-channel power MOSFET engineered specifically to meet the rigorous demands of advanced switching applications, from industrial motor drives to robust switch-mode power supplies (SMPS) and high-frequency inverters.

A cornerstone of this device's appeal is its exceptionally low on-state resistance (RDS(on)), a critical parameter that directly dictates conduction losses. The IRF100B202 boasts an impressively low maximum RDS(on) of just 2.0 mΩ at a gate voltage of 10 V. This minimal resistance allows the MOSFET to handle high continuous drain currents (ID) up to 100A with remarkable efficiency, minimizing heat generation and enabling more compact system designs by reducing the need for extensive cooling solutions.

Beyond its static performance, the MOSFET excels in dynamic operation. It is characterized by fast switching speeds and low gate charge (Qg). These attributes are paramount for high-frequency switching circuits, as they significantly reduce switching losses—the energy dissipated during the transition between on and off states. This capability ensures that systems can operate at higher frequencies, leading to improvements in power density by allowing the use of smaller passive components like inductors and capacitors.

The device is built upon Infineon's advanced proprietary technology, which ensures a high level of avalanche ruggedness and reliability. This robustness provides designers with a critical safety margin, as the MOSFET can withstand unexpected voltage transients and stressful operating conditions that would typically cause lesser components to fail. Housed in a TO-263 (D2PAK) package, the IRF100B202 offers an excellent efficient thermal performance due to its low thermal resistance, ensuring that heat is effectively transferred away from the silicon die to the PCB or heatsink, thereby maintaining operational integrity even under heavy load.

ICGOOODFIND: The Infineon IRF100B202 emerges as a superior choice for engineers focused on maximizing efficiency and reliability in high-current applications. Its winning combination of ultra-low RDS(on), fast switching capability, and proven avalanche ruggedness makes it an indispensable component for pushing the boundaries of performance in modern power conversion systems.

Keywords: Power MOSFET, Low RDS(on), Fast Switching, High Current, Avalanche Ruggedness.