Infineon BSZ160N10NS3G: A 100V OptiMOS Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's OptiMOS™ family, renowned for its exceptional performance in switching applications. The BSZ160N10NS3G, a 100V N-channel power MOSFET, stands as a prime example of this engineering excellence, offering a compelling blend of low losses, robust performance, and high reliability.

Engineered for high-frequency switching, the BSZ160N10NS3G is a key enabler for applications demanding superior efficiency. Its core strength lies in its extremely low figure-of-merit (FOM), characterized by an outstandingly low on-state resistance (R DS(on)) of just 1.6 mΩ (max. at 10 V) combined with low gate charge (Q G). This optimal balance is critical; it ensures minimal conduction losses when the device is on and very swift switching transitions, which drastically reduces switching losses. The result is a significant boost in overall system efficiency, particularly in high-frequency circuits where these losses are a dominant factor.

This MOSFET is housed in a SuperSO8 package, which offers a vastly improved thermal performance over standard SO-8 packages. The package's innovative design minimizes parasitic inductance, further enhancing switching performance, while its exposed pad provides an effective path for heat dissipation. This allows designers to push their systems harder or make them more compact without compromising thermal management, a crucial aspect for increasing power density.

The 100V voltage rating of the BSZ160N10NS3G makes it exceptionally versatile, targeting a broad spectrum of use cases. It is an ideal choice for:

Synchronous rectification in switched-mode power supplies (SMPS) for servers, telecom, and industrial equipment.

DC-DC conversion stages in computing and data center infrastructure.

Motor control and driving circuits for industrial automation and consumer appliances.

Battery protection and management systems in power tools and energy storage.

Furthermore, the device is 100% avalanche tested, guaranteeing ruggedness and reliability under extreme operating conditions, such as voltage overshoots during switching events. This robustness provides designers with a critical margin of safety, ensuring long-term system durability.

ICGOOODFIND: The Infineon BSZ160N10NS3G is a high-performance OptiMOS™ MOSFET that sets a high standard for efficiency in power conversion. Its industry-leading low R DS(on) and superior switching characteristics make it an optimal solution for designers aiming to maximize efficiency, reduce heat generation, and achieve higher power density in their 100V applications.

Keywords: Low RDS(on), High-Efficiency Switching, OptiMOS Power MOSFET, SuperSO8 Package, Synchronous Rectification.