Infineon IPC50N04S5L-5R5: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Management

In the realm of modern power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPC50N04S5L-5R5, a member of the advanced OptiMOS™ 5 power MOSFET family, stands out as a premier solution engineered to meet these demanding requirements. This device is specifically designed to deliver exceptional efficiency and power density in a wide array of applications, from server and telecom power supplies to motor drives and battery management systems.

Built on Infineon’s state-of-the-art silicon technology, this N-channel MOSFET boasts a low maximum on-state resistance (R DS(on)) of just 5.5 mΩ at 10 V. This ultra-low resistance is a key factor in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. The device is rated for 40 V drain-source voltage (V DS) and a continuous drain current (I D) of 50 A, making it robust enough to handle high-power scenarios with ease.

One of the most significant advantages of the OptiMOS™ 5 technology is its superior switching performance. The IPC50N04S5L-5R5 features optimized gate charge (Q G) and low figures of merit (FOM), which contribute to reduced switching losses. This is particularly beneficial in high-frequency switching applications, such as DC-DC converters, where faster switching enables the use of smaller passive components, leading to more compact and cost-effective designs.

Thermal management is another critical area where this component excels. The low thermal resistance and high efficiency ensure that the MOSFET operates at lower temperatures, enhancing system reliability and longevity. The device is offered in a D2PAK (TO-263) package, which provides excellent power dissipation capabilities and is suitable for surface-mount technology (SMT), simplifying the assembly process.

Furthermore, the IPC50N04S5L-5R5 is designed with robustness in mind, offering high durability and avalanche ruggedness. This makes it suitable for use in harsh environments where reliability cannot be compromised.

ICGOODFIND: The Infineon IPC50N04S5L-5R5 OptiMOS™ 5 power MOSFET is a top-tier component that sets a high standard for performance in power management. Its blend of ultra-low R DS(on), excellent switching characteristics, and strong thermal performance makes it an ideal choice for designers aiming to maximize efficiency and power density in next-generation electronic systems.

Keywords:

Power MOSFET,

High Efficiency,

OptiMOS 5,

Low RDS(on),

Thermal Performance