Infineon IHW20N120R2: A High-Performance 1200V TRENCHSTOP™ IGBT3 Power Transistor
In the realm of power electronics, achieving an optimal balance between high efficiency, robustness, and cost-effectiveness is a perpetual challenge. The Infineon IHW20N120R2 stands as a formidable solution, engineered to meet the demanding requirements of modern high-power applications. As a member of the advanced TRENCHSTOP™ IGBT3 family, this 1200V power transistor sets a benchmark for performance in industries ranging from industrial drives and renewable energy systems to uninterruptible power supplies (UPS) and welding equipment.
The core of this device's superiority lies in its innovative trench gate field-stop technology. This cutting-edge design drastically reduces saturation voltage (VCE(sat)) and minimizes switching losses, a critical combination that enables higher operating frequencies and improved thermal management. The result is a system that operates with significantly higher efficiency, leading to lower energy consumption and reduced heat sink requirements, which in turn lowers the overall system cost and size.
Beyond efficiency, the IHW20N120R2 is designed for exceptional ruggedness and reliability. It features a very tight parameter distribution and possesses outstanding short-circuit robustness (tsc = 10µs), ensuring stable and safe operation even under extreme electrical stress conditions. This makes it an ideal choice for harsh industrial environments where durability is non-negotiable. The device is also co-packed with a robust and fast anti-parallel emitter-controlled HEXTOOL diode, which optimizes reverse recovery behavior and further enhances the overall performance and reliability of the power module.
Furthermore, the transistor's positive temperature coefficient of saturation voltage allows for easy parallel connection of multiple devices. This is crucial for scaling up power in high-current applications without compromising on stability or performance.
ICGOODFIND: The Infineon IHW20N120R2 is a pinnacle of power semiconductor design, masterfully integrating ultra-low losses, high ruggedness, and ease of use. It is an indispensable component for engineers aiming to push the boundaries of power density and efficiency in next-generation high-power conversion systems.
Keywords: TRENCHSTOP™ IGBT3, High Efficiency, 1200V, Low Saturation Voltage, Short-Circuit Robustness.
