Infineon IPA60R280P7S CoolMOS™ P7 Power MOSFET: Advanced Superjunction Technology for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics is largely driven by innovations in power semiconductor technology. At the forefront of this evolution is the Infineon IPA60R280P7S, a member of the renowned CoolMOS™ P7 family. This Power MOSFET is engineered to set new benchmarks in performance for a wide array of high-efficiency switching applications, including switch-mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial drives.

The cornerstone of the IPA60R280P7S's superior performance is its advanced superjunction (SJ) technology. This proprietary design fundamentally redefines the traditional trade-off between on-state resistance (RDS(on)) and gate charge (Qg). By enabling an exceptionally low specific on-resistance, this technology allows the device to achieve minimal conduction losses. Simultaneously, its optimized internal structure ensures ultra-low switching losses, which is critical for high-frequency operation. The result is a remarkable reduction in overall power loss, leading to cooler operation, higher system reliability, and the potential for smaller heatsinks and more compact designs.

A key feature of this MOSFET is its impressive 800V drain-source voltage rating, providing a robust safety margin and enhanced resilience against voltage spikes in demanding environments. With a maximum RDS(on) of just 0.28 Ohm at room temperature, it ensures highly efficient power conduction. Furthermore, the device exhibits an exceptionally low gate charge and reduced internal capacitances. This translates directly into faster switching speeds, reduced drive requirements, and the ability to operate at higher frequencies, which in turn allows for the use of smaller passive components like inductors and transformers.

The benefits extend beyond raw electrical characteristics. The CoolMOS™ P7 technology incorporates integrated additional features such as a high body-diode ruggedness and excellent EMI behavior, simplifying circuit design and improving overall system robustness. Its lead-free (Pb-free) and halogen-free package also complies with the latest environmental regulations.

In summary, the Infineon IPA60R280P7S represents a significant leap forward in power switching technology. It empowers designers to push the boundaries of efficiency and power density, making it an ideal solution for the next generation of energy-conscious and compact electronic equipment.

ICGOOODFIND: The Infineon IPA60R280P7S leverages cutting-edge superjunction technology to deliver an unmatched combination of low conduction and switching losses, making it a top-tier choice for high-efficiency, high-frequency power conversion systems.

Keywords: Superjunction Technology, High-Efficiency Switching, Low Switching Losses, 800V MOSFET, Power Density